Level converter circuit and aliquid crystal display device employing the same

ABSTRACT

A level converter circuit includes an input terminal adapted to be supplied with a signal swinging from a first voltage to a second voltage lower than the first voltage; a first transistor having a gate electrode connected to the input terminal, and a source electrode connected to ground potential; a second transistor having a gate electrode connected to a drain electrode of the first transistor, a source electrode connected to a supply voltage, and a drain electrode connected to an output terminal; a load circuit connected between the gate electrode of the second transistor and the supply voltage; a third transistor having a source electrode connected to the input terminal, a drain electrode connected to the output terminal, and a gate electrode supplied with a DC voltage higher than the second voltage and lower than the first voltage. The level converter circuit outputs a third voltage higher than the second voltage when the input terminal is supplied with the first voltage, and the level converter circuit outputs the second voltage when the input terminal is supplied with the second voltage.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a level converter circuit and aliquid crystal display device employing the level converter circuit, andin particular to a level converter circuit formed by polysilicontransistors.

[0002] Liquid crystal display modules of the STN (Super Twisted Nematic)type or the TFT (Thin Film Transistor) type are widely used as a displaydevice for a notebook personal computer and the like. Some drivercircuits for driving such liquid crystal display panels need a levelconverter circuit external to the liquid crystal display panel. Such alevel converter circuit is disclosed in Japanese Patent ApplicationLaid-open No. Hei 6-204,850 (laid-open on Jul. 22, 1994), for example.

[0003]FIG. 13 is a circuit diagram of an example of a prior art levelconverter circuit. The level converter circuit shown in FIG. 13 isformed by MOS transistors using single crystal silicon for theirsemiconductor layers, and is of the same circuit configuration as thatshown in FIG. 4 of Japanese Patent Application Laid-open No. Hei6-204,850.

[0004] The level converter circuit shown in FIG. 13 has a CMOS inverterINV1 to which a low-voltage input signal φ1 is supplied and a CMOSinverter INV2 to which an output signal φ2 from the CMOS inverter INV1is supplied.

[0005] The CMOS inverter INV1 is formed by a p-channel MOS transistor(hereinafter referred to as a PMOS) M5 and an n-channel MOS transistor(hereinafter referred to as an NMOS) M6 which are connected in seriesbetween a low voltage VCC and a reference voltage (or ground potential)Vss.

[0006] The CMOS inverter INV2 is formed by a PMOS M7 and an NMOS M8which are connected in series between the low voltage VCC and thereference voltage (or ground potential) Vss.

[0007] Further, the level converter circuit includes a seriescombination of a PMOS M9 and an NMOS M11 and a series combination of aPMOS M10 and an NMOS M12, which are connected between a high voltage VDDand the reference voltage VSS.

[0008] An output signal φ3 from the CMOS inverter INV2 is supplied to agate electrode of the NMOS M11, and an output signal φ2 from the CMOSinverter INV1 is supplied to a gate electrode of the NMOS M12. A gateelectrode of the PMOS M9 is connected to a drain electrode of the PMOSM10, and a gate electrode of the PMOS M10 is connected to a drainelectrode of the PMOS M9.

[0009] The input signal φ1 supplied via an input terminal VIN has anamplitude between the low voltage VCC and the reference voltage VSS, andis converted into the low voltage outputs φ2 and φ3 each havingamplitudes between the low voltage VCC and the reference voltage VSS.

[0010] The low voltage output signals φ2 and φ3 are supplied to gateelectrodes of the NMOS M11 and the NMOS M12, respectively, and outputsfrom output terminals VOUT1 and VOUT2 are two level-converted signals,that is, two complementary output signals φ4 and φ5 having amplitudesbetween the high supply voltage VDD and ground potential VSS,respectively.

[0011] For example, suppose that the low voltage output signal φ2 is ata high level (hereafter referred to merely as an H level) and the lowvoltage output signal φ3 is at a low level (hereafter referred to merelyas an L level). Then the NMOS M12 is ON, PMOS M9 is ON, NMOS M11 is OFF,and PMOS M10 is OFF, and therefore the output terminal VOUT2 outputs theground potential VSS and the output terminal VOUT1 outputs the highvoltage VDD.

[0012] Next, suppose that the low voltage output signal φ2 is at the Llevel and the low voltage output signal φ3 is at the H level. Then theNMOS M12 is OFF, the PMOS M9 is OFF, the NMOS M11 is ON, and the PMOSM10 is ON, and therefore the output terminal VOUT2 outputs the highsupply voltage VDD and the output terminal VOUT1 outputs the groundpotential VSS.

[0013]FIG. 14 is a circuit diagram of another example of a prior artlevel converter circuit. The level converter circuit shown in FIG. 14 isalso formed by MOS transistors using single crystal silicon for theirsemiconductor layers, and is of the same circuit configuration as thatshown in FIG. 1 of Japanese Patent Application Laid-open No. Hei6-204,850.

[0014] The level converter circuit shown in FIG. 14 differs from thatshown in FIG. 13, in that the CMOS inverter INV2 is omitted, the outputsignal φ2 from the CMOS inverter INV1 is supplied to the sourceelectrode of the NMOS M11, and the gate of which is supplied with thelow voltage VCC.

[0015] In the level converter circuit shown in FIG. 13, when thelevel-converted output signals φ4, φ5 from the output terminals VOUT1,V0UT2 change from the H level to the L level, or from the L level to theH level, all of the PMOS M9, the NMOS M11, the PMOS M10 and the NMOS M12are turned ON simultaneously, and consequently, currents flow through aseries combination of the PMOS M9 and the NMOS M11 and a seriescombination of the PMOS M10 and the NMOS M12, respectively. The levelconverter circuit shown in FIG. 14 is configured so as to prevent suchcurrents from flowing through the series combination of the PMOS M9 andthe NMOS M11 and the series combination of the PMOS M10 and the NMOSM12.

[0016] The level converter circuit shown in FIG. 13 needs a total ofeight MOS transistors comprising four MOS transistors M5 to M8 in thelow-voltage circuit and four MOS transistors M9 to M12 in thehigh-voltage circuit, the level converter circuit shown in FIG. 14 needssix MOS transistors, and therefore the prior art level convertercircuits had the problem in that many MOS transistors are needed.

[0017] It is known that mobility in MOS transistors using as theirsemiconductor layers, single crystal silicon, polysilicon and amorphoussilicon are 1,000 to 2,000 cm²/(V·s), 10 to 100 cm²/(V· s), and 0.1 to10 cm²/(V·s), respectively. MOS transistors using as their semiconductorlayers, polysilicon and amorphous silicon are capable of beingfabricated on a transparent insulating substrate made of quartz glass orglass having a softening temperature not higher than 800° C., andtherefore electronic circuits can be fabricated directly on a displaydevice such as a liquid crystal display device.

[0018]FIG. 15 is a graph showing an example of switching characteristicsof an n-channel MOS transistor having a semiconductor made of singlecrystal silicon, and FIG. 16 is a graph showing an example of switchingcharacteristics of an n-channel MOS transistor having a semiconductorlayer made of polysilicon.

[0019] In FIGS. 15 and 16, curves A represent characteristics for astandard threshold VTH, curves B represent characteristics for athreshold voltage VTH shifted by −1 V from the standard thresholdvoltage, and curves C represent characteristics for a threshold voltageVTH shifted by +1 V from the standard threshold voltage.

[0020] As is understood from FIGS. 15 and 16, in the case of thepolysilicon MOS transistor (a polysilicon thin film transistor, forexample) using as a semiconductor layer a polysilicon obtained by asolid phase epitaxy method crystallizing at a temperature of 500° C. to1,100° C., or a polysilicon obtained by crystallizing by laser-annealingamorphous silicon produced by a CVD method, when a gate-source voltageVGS is small (5 V or less), drain currents ID of the polysilicon MOStransistor is smaller than those of the MOS transistor having thesemiconductor layer of single crystal silicon, and drain currents ID ofthe polysilicon MOS transistor vary greatly with variations of thethreshold voltages VTH.

[0021] As a result, when the level converter circuits shown in FIGS. 13and 14 are formed by MOS transistors having semiconductor layers made ofsingle crystal silicon, satisfactory operation can be guaranteed, butwhen the level converter circuits shown in FIGS. 13 and 14 are formed bypolysilicon MOS transistors having semiconductor layers made ofpolysilicon, there was a disadvantage that sufficient driving capabilitycould not be obtained in a case where the supply voltage is the lowvoltage VCC.

[0022]FIG. 17 is a graph showing DC transfer characteristics of a CMOSinverter.

[0023] In general, in a CMOS inverter, threshold voltages VTH aredetermined in the p-channel MOS transistors and the N-channel MOStransistors forming the CMOS inverter such that, when an input signalexceeds the middle between the H level and the L level of the inputsignals, the p-channel and N-channel MOS transistors forming the CMOSinverter change from ON to OFF, or from OFF to ON. Curve A in FIG. 17represent the DC transfer characteristic in this state.

[0024] Curve B in FIG. 17 represents a DC transfer characteristic in acase where the threshold voltages VTH of the p-channel and N-channel MOStransistors forming the CMOS inverter is shifted to the left of thecurve A, and curve C in FIG. 17 represents a DC transfer characteristicin a case where the threshold voltages VTH of the p-channel andN-channel MOS transistors forming the CMOS inverter is shifted to theright of the curve A.

[0025]FIGS. 18A to 18D are schematic illustrations for explaining inputand output waveforms of the CMOS inverter.

[0026]FIG. 18A represents a waveform of an input signal to the CMOSinverter, FIGS. 18B to 18D represent waveforms of output signals fromthe CMOS inverters having DC transfer characteristics corresponding tothe curves A to C of FIG. 17, respectively.

[0027] If the DC transfer characteristic of the CMOS inverter isrepresented by the curve A of FIG. 17, the output signal starts to falldelayed by a time tDA from the time the input signal starts to rise, buta duration LHA of the H level and a duration LLA of the L level of theoutput signal are the same as durations of the H and L levels of theinput signal, respectively, as shown in FIG. 18B.

[0028] But, if the DC transfer characteristic of the CMOS inverter isrepresented by the curve B of FIG. 17, the output signal starts to falldelayed by a time tDB which is shorter than the time tDA, from the timethe input signal starts to rise, a duration LHB of the H level of theoutput signal is shorter than the duration of the H level of the inputsignal and a duration LLB of the L level of the output signal is longerthan the duration of the L level of the input signal, as shown in FIG.18C.

[0029] And, if the DC transfer characteristic of the CMOS inverter isrepresented by the curve C of FIG. 17, the output signal starts to falldelayed by a time tDC which is longer than the time tDA, from the timethe input signal starts to rise, and a duration LHC of the H level ofthe output signal is longer than the duration of the H level of theinput signal and a duration LLC of the L level of the output signal isshorter than the duration of the L level of the input signal, as shownin FIG. 18D.

[0030] In general, threshold voltages VTH of polysilicon MOS transistorsvary more greatly than those of MOS transistors having single crystalsilicon layer, and as is apparent from FIG. 16, drain currents ID varygreatly with variations of threshold voltages VTH of the polysilicon MOStransistors.

[0031] As a result, if the prior art level converter circuit is formedby polysilicon MOS transistors, the DC transfer characteristics of theCMOS inverters INV1, INV2 (see FIG. 13) vary greatly mainly due to thevariations of the threshold voltages VTH of the polysilicon MOStransistors of the CMOS inverters INV1, INV2, and consequently, therewas a problem in that a delay time (or a phase difference) of the outputsignal with respect to the input signal and a variation of a duration ofthe H or L level of the output signal increase.

[0032] For example, FIG. 19 shows waveforms of input and output signalsof the level converter circuit of FIG. 13 formed by n-channel MOStransistors using polysilicon having mobility of about 80 cm²/(V· s) andp-channel MOS transistors using polysilicon having mobility of about 60cm²/(V·s).

[0033] In FIG. 19, curve φ5 represents an output of the level convertercircuit having standard threshold voltages VTH, curve φ5-1 represents anoutput of the level converter circuit in a case where threshold voltagesVTH of the NMOS and PMOS transistors shift by −1 V, and curve φ5-2represents an output of the level converter circuit in a case wherethreshold voltages VTH of the NMOS and PMOS transistors shift by +1 V.

[0034] As is apparent from FIG. 19, the delay time of the output signalwith respect to the input signal and a variation of a duration of the Hlevel of the output signal vary greatly with the variations of thethreshold voltages VTH of the MOS transistors.

[0035] In a liquid crystal display module of the analog-samplingactive-matrix type using polysilicon MOS transistors, such variations ofthe delay time of the output signal from the level converter circuit andthe duration of the H level of the output signal cause a degradation inpicture quality such as a picture defect in the form of a vertical line,when a half tone picture is displayed.

[0036]FIG. 20 is an illustration for explaining a principle ofdisplaying by the liquid crystal display module of the active matrixtype using polysilicon MOS transistors.

[0037] In the liquid crystal display module of the active matrix typeusing polysilicon MOS transistors, during one horizontal scanningperiod, a gate electrode line G1, for example, is selected by a scanningcircuit and during this period analog video signals φsig are sampled andsupplied to, . . . an (n−1)st drain electrode line, an nth drainelectrode line, an (n+1)st drain electrode line . . . , sequentially byshift scanning of shift registers SR of a horizontal scanning circuit,and this horizontal scanning is repeated the number of times equal tothe number of the gate electrode lines to form a picture.

[0038] The operation of sampling the analog video signals φsig for the(n−1)st, nth and (n+1)st drain electrode lines will be explained byreferring to time charts in FIG. 21.

[0039] First, voltage levels of complementary clock input signals φ PLand φNL are level-converted by level converter circuits LV1 and LV2,respectively, to produce level-converted mutually complementary signalsφNH and φPH.

[0040] The signal φPH and an output from one shift register SR aresupplied to a NAND circuit NA1 to produce a sampling pulse φN, and thesignal φNH and an output from another shift register SR are supplied toa NAND circuit NA2 to produce a sampling pulse φN+1.

[0041] The inverted pulses /φN and /φN+1 (A slant “/” is used instead ofthe bar “^(—)” to indicate an inverted signal.) of the sampling pulsesφON and φON+1 drive sample-and-hold circuits SH1 and SH2 to sampletime-varying analog video signals φsig sequentially and supply videosignal voltages φm−1, φm and φm+1 to the (n−1)st, nth and (n+ 1)st drainelectrode lines.

[0042] As a result, if the threshold voltages VTH of the MOS transistorsof the level converter circuits LV1 and LV2 vary, the phases and thedurations of the H level of the complementary signals φNH and φPHlevel-converted by the level converter circuits LV1 and LV2 vary, andconsequently, the phases and the durations of the H level of thesampling pulses φN and φN+1 vary.

[0043] The variations of the phases and the durations of the H level ofthe sampling pulses φN and φN+1 cause shortening of the sampling time,sampling of a portion of the analog video signal φsig different from aportion of the analog video signal φsig intended to be sampled, oroverlapping of the sampling times of the two sampling pulses φ N andφN+1. These produce a ghost in an image displayed on a liquid crystaldisplay panel, and therefore deteriorate display quality of thedisplayed image extremely.

[0044] In a digital-signal-input type liquid crystal display module ofthe active matrix type using polysilicon MOS transistors, if such levelconverter circuits are employed before a digital-analog converter (a D/Aconverter), variations of delay times occur in level converter circuitscorresponding to respective data bits and consequently, a false pictureis produced because some data bits are digital-to-analog converted in astate where they are inverted.

SUMMARY OF THE INVENTION

[0045] The present invention is made so as to solve the above problemswith the prior art, it is an object of the present invention to providea technique capable of operating a level converter circuit at a highspeed and stably irrespective of variations of threshold voltages oftransistors.

[0046] It is another object of the present invention to provide atechnique capable of improving the quality of displayed images by aliquid crystal display device by using the above level convertercircuit.

[0047] The above-mentioned and other objects and novel features of thepresent invention will be made apparent by the following description andaccompanying drawings.

[0048] The following explains the representative ones of the presentinventions briefly.

[0049] In accordance with an embodiment of the present invention, thereis provided a level converter circuit comprising: an input terminaladapted to be supplied with a signal swinging from a first voltage to asecond voltage lower than the first voltage; a first transistor having agate electrode connected to the input terminal, and a source electrodeconnected to ground potential; a second transistor having a gateelectrode connected to a drain electrode of the first transistor, asource electrode connected to a supply voltage, and a drain electrodeconnected to an output terminal; a load circuit connected between thegate electrode of the second transistor and the supply voltage; a thirdtransistor having a source electrode connected to the input terminal, adrain electrode connected to the output terminal, and a gate electrodesupplied with a DC voltage higher than the second voltage and lower thanthe first voltage, wherein the level converter circuit outputs a thirdvoltage higher than the second voltage when the input terminal issupplied with the first voltage, and the level converter circuit outputsthe second voltage when the input terminal is supplied with the secondvoltage.

[0050] In accordance with another embodiment of the present invention,there is provided a level converter circuit comprising: an inputterminal adapted to be supplied with a digital signal swinging from afirst voltage to a second voltage lower than the first voltage; a firsttransistor having a gate electrode connected to the input terminal, anda source electrode connected to ground potential; a second transistorhaving a gate electrode connected to a drain electrode of the firsttransistor, a source electrode connected to a supply voltage, and adrain electrode connected to an output terminal; a load circuitconnected between the gate electrode of the second transistor and thesupply voltage; a third transistor having a source electrode connectedto the input terminal, a drain electrode connected to the outputterminal, and a gate electrode supplied with a DC voltage higher thanthe second voltage and lower than the first voltage, wherein (a) whenthe input terminal is supplied with the first voltage, the firsttransistor and the second transistor are ON, and the level convertercircuit outputs a third voltage higher than the first voltage; and (b)when the input terminal is supplied with the second voltage, the firsttransistor and the second transistor are OFF and the level convertercircuit outputs the second voltage via the third transistor.

[0051] In accordance with still another embodiment of the presentinvention, there is provided a liquid crystal display device including apair of substrates, a liquid crystal layer sandwiched between the pairof substrates, a plurality of pixels formed between the pair ofsubstrates and a driver circuit for driving the plurality of pixels, thedriver circuit being provided with a level converter circuit, the levelconverter circuit comprising: an input terminal adapted to be suppliedwith a digital signal swinging from a first voltage to a second voltagelower than the first voltage; a first transistor of an n-channel typehaving a gate electrode connected to the input terminal, and a sourceelectrode connected to ground potential; a second transistor of ap-channel type having a gate electrode connected to a drain electrode ofthe first transistor, a source electrode connected to a supply voltage,and a drain electrode connected to an output terminal; a load circuitconnected between the gate electrode of the second transistor and thesupply voltage; a third transistor having a source electrode connectedto the input terminal, a drain electrode connected to the outputterminal, and a gate electrode supplied with a DC voltage, the DCvoltage being such that, (a) when the source electrode of the thirdtransistor is supplied with the second voltage, the third transistor isON, and (b) when the source electrode of the third transistor issupplied with the first voltage, the third transistor is OFF, wherein(i) when the input terminal is supplied with the first voltage, thefirst transistor and the second transistor are ON, and the levelconverter circuit outputs a third voltage higher than the first voltage;and (ii) when the input terminal is supplied with the second voltage,the first transistor and the second transistor are OFF and the levelconverter circuit outputs the second voltage via the third transistor.

BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In the accompanying drawings, in which like reference numeralsdesignate similar components throughout the figures, and in which:

[0053]FIG. 1 is a circuit diagram of a level converter circuit ofEmbodiment 1 of the present invention;

[0054]FIG. 2 is an illustration of examples of input and output signalwaveforms of the level converter circuit of Embodiment 1 of the presentinvention;

[0055]FIG. 3 is a circuit diagram of a modification of the levelconverter circuit of Embodiment 1 of the present invention;

[0056]FIG. 4 is a circuit diagram of another modification of the levelconverter circuit of Embodiment 1 of the present invention;

[0057]FIG. 5 is a circuit diagram of still another modification of thelevel converter circuit of Embodiment 1 of the present invention;

[0058]FIG. 6 is a circuit diagram of still another modification of thelevel converter circuit of Embodiment 1 of the present invention;

[0059]FIG. 7 is a circuit diagram of still another modification of thelevel converter circuit of Embodiment 1 of the present invention;

[0060]FIG. 8 is a circuit diagram of a level converter circuit ofEmbodiment 2 of the present invention;

[0061]FIG. 9 is a circuit diagram of a level converter circuit ofEmbodiment 3 of the present invention;

[0062]FIG. 10 is a circuit diagram of a level converter circuit ofEmbodiment 4 of the present invention;

[0063]FIG. 11 is a block diagram representing a configuration of adisplay panel of an active- matrix type liquid crystal display module ofthe analog-sampling type using polysilicon MOS transistors in accordancewith Embodiment 5 of the present invention;

[0064]FIG. 12 is a block diagram representing a configuration of adisplay panel of a liquid crystal display module of thedigital-signal-input active-matrix type using polysilicon MOStransistors in accordance with Embodiment 5 of the present invention;

[0065]FIG. 13 is a circuit diagram of an example of a prior art levelconverter circuit;

[0066]FIG. 14 is a circuit diagram of another example of a prior artlevel converter circuit;

[0067]FIG. 15 is a graph showing an example of switching characteristicsof a n-channel MOS transistor having a semiconductor made of singlecrystal silicon;

[0068]FIG. 16 is a graph showing an example of switching characteristicsof a MOS transistor having a semiconductor layer made of polysilicon;

[0069]FIG. 17 is a graph showing DC transfer characteristics of a CMOSinverter;

[0070]FIG. 18A is an illustration of a waveform of an input signal to aCMOS inverter, and FIGS. 18B to 18D are illustrations of waveforms ofoutput signals from the CMOS inverter;

[0071]FIG. 19 is an illustration of an example of waveforms of input andoutput signals of the level converter circuit of FIG. 13 formed bypolysilicon n-channel MOS transistors and polysilicon p-channel MOStransistors;

[0072]FIG. 20 is an illustration for explaining a principle ofdisplaying by a liquid crystal display module of the active matrix typeusing polysilicon MOS transistors;

[0073]FIG. 21 is timing charts for explaining the operation of samplinganalog video signals φsig to be supplied to a drain electrode line inFIG. 20; and

[0074]FIG. 22 is a circuit diagram of a prior art buffer circuit.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0075] The embodiments of the present invention will be explained indetail by reference to the drawings. All the drawings for theembodiments use the same reference numerals to identify parts performingthe same functions, which are not repeatedly described in thespecification.

[0076] Embodiment 1

[0077]FIG. 1 is a circuit diagram representing a level converter circuitof Embodiment 1 of the present invention.

[0078] As shown in FIG. 1, the level converter circuit of thisembodiment is formed by a total of transistors including twoenhancement-mode p-channel polysilicon MOS transistors and twoenhancement-mode n-channel polysilicon MOS transistors, and the levelconverter circuit has a first stage formed by PMOS M1 and NMOS M3 and asecond stage formed by PMOS M2 and NMOS M4.

[0079] A source electrode of NMOS M3 of the first stage is connected tothe reference voltage VSS (ground potential) and a gate electrode ofNMOS M3 is supplied with an input signal φ6 from a input terminal VIN.

[0080] The input signal φ6 has an amplitude of VCC, or varies from avoltage higher than VCC to ground potential VSS.

[0081] A drain electrode of PMOS M1 is connected to a drain electrode ofNMOS M3, and a source electrode and a gate electrode of PMOS M1 areconnected to the high voltage VDD and its drain electrode, respectively.

[0082] A source electrode of NMOS M4 of the second stage is suppliedwith the input signal φ6 and a gate electrode of NMOS M4 is connected toa low voltage VCC.

[0083] A drain electrode of PMOS M2 is connected to a drain electrode ofNMOS M4, and a source electrode and a gate electrode of PMOS M2 areconnected to the high voltage VDD and the drain electrode of PMOS M1,respectively. Namely, PMOS M1 forms an active load.

[0084] A level-converted output signal φ8 is output from the drainelectrode of PMOS M2 of the second stage.

[0085] In the level converter circuit of this embodiment, amongelectrodes of NMOS M3 and M4 of the first and second stages, all theelectrodes (i.e., the source and gate electrodes of NMOS M3 and thesource and gate electrodes of NMOS M4) except for electrodes connectedto an output terminal or a next stage are supplied with the input signalφ6 or a direct-current voltage (the low voltage VCC or ground potentialVSS).

[0086] Next, the operation of the level converter circuit of thisembodiment will be explained.

[0087] When the input signal φ6 from the input terminal VIN is at the Hlevel, NMOS M3 is ON, PMOS M1 is ON, NMOS M4 is OFF, PMOS M2 is ON, andtherefore the output terminal VOUT outputs the high voltage VDD. Whenthe input signal φ6 is at the L level, NMOS M3 is OFF, PMOS M1 is OFF,NMOS M4 is ON, PMOS M2 is OFF, and therefore the output terminal VOUToutputs the input signal φ6 which is at the L level.

[0088]FIG. 2 is illustrations of examples of waveforms of the input andoutput signals of the level converter circuit of this embodiment.

[0089]FIG. 2 illustrates the waveforms of the input and output signalsin a case where polysilicon n-channel MOS transistors having mobility ofabout 80 cm²/(V·s) are used as NMOS M3 and M4, and polysilicon p-channelMOS transistors having mobility of about 60 cm²/(V·s) are used as PMOSM1 and M2.

[0090] In FIG. 2, curve φ8 represents a waveform of an output in a casewhere NMOS M3, M4 and PMOS M1, M2 have standard threshold voltages VTH,curve φ8-1 represents a waveform of an output in a case where NMOS M3,M4 and PMOS M1, M2 have threshold voltages changed by −1 V, and curveφ8-2 represents a waveform of an output in a case where NMOS M3, M4 andPMOS M1, M2 have threshold voltages changed by +1 V.

[0091] As is apparent from FIG. 2, the level converter circuit of thisembodiment provides comparatively stable input and outputcharacteristics irrespective of the variations of the threshold voltagesVTH of NMOS M3, M4 and PMOS M1, M2, compared with the waveforms of theinput and output characteristics shown in FIG. 19.

[0092] As described above, the threshold voltages VTH of the polysiliconMOS transistors vary greatly, and as shown in FIG. 16, when the supplyvoltage is low, the drain currents ID vary greatly with the variationsof the threshold voltages VTH of the MOS transistors.

[0093] However, in the level converter circuit of this embodiment, theexternal signal φ6 is applied to the gate electrode of NMOS M3 and thesource electrode of NMOS M4 directly from the input terminal VIN, and asa result, even if the threshold voltages VTH of the polysilicon MOStransistors vary, the drain currents ID do not vary much.

[0094] Consequently, the level converter circuit of this embodiment canprevent the delay time of the output signal and the duration of the Hlevel of the output signal from varying greatly with the variations ofthe threshold voltages VTH of the transistors NMOS M3, M4 and PMOS M1,M2 forming the level converter circuit.

[0095] Incidentally, the advantages of this embodiment are obtained in alevel converter circuit using transistors having single-crystalsemiconductor layers. However, as shown in FIG. 15, the thresholdvoltages VTH of the MOS transistors having a single-crystalsemiconductor layer do not vary much, and a large amount of the draincurrents can be obtained, and consequently, it is common sense to use aconventional circuit shown in FIG. 13 for the purpose of low powerconsumption. Therefore no one has thought of the level converter circuitof this embodiment shown in FIG. 1, because there is a disadvantage ofincrease of power consumption.

[0096] FIGS. 3 to 7 are circuit diagrams for illustrating modificationsof the level converter circuit of the embodiment of the presentinvention.

[0097] A level converter circuit shown in FIG. 3 uses a resistor elementas a load of its first stage. In the level converter circuit of FIG. 3,the same polysilicon film and wiring electrodes as those of the thinfilm transistors (TFTs) can be used for the resistor element, and as aresult, the level converter circuit can be fabricated simply andmanufactured easily.

[0098] A level converter circuit shown in FIG. 4 uses as a load of itsfirst stage a polysilicon PMOS M1 a gate electrode of which is suppliedwith a specified bias supply voltage Vbb. In the level converter circuitof FIG. 4, a current flowing through NMOS M3 is limited by PMOS M1, andconsequently, its power consumption is suppressed. The limit of thecurrent is determined by the bias supply voltage Vbb.

[0099] A level converter circuit shown in FIG. 5 uses as a load of itsfirst stage an active load formed by a polysilicon NMOS M20. In thelevel converter circuit of FIG. 5, an input stage is formed only by MOStransistors of NMOS M3 and M20, and the NMOS transistors have highermobility than PMOS transistors and therefore the level converter circuitoperates with greater speed.

[0100] A level converter circuit shown in FIG. 6 uses as a load of itsfirst stage an active load formed by a depletion-mode polysilicon NMOSM21. In the level converter circuit of FIG. 6, NMOS M21 is adepletion-mode MOS transistor, and it can flow a current therethrough atall times and therefore the level converter circuit operates withgreater speed, but the power consumption is increased accordingly.

[0101] A level converter circuit shown in FIG. 7 uses a diode D as aload of its first stage. The diode D is fabricated by doping the samepolysilicon film as that of the thin film transistors (TFT) withimpurities for forming a p-type region and an n-type region,respectively, and therefore the level converter circuit of FIG. 7facilitates its manufacturing process.

[0102] The level converter circuits shown in FIGS. 3 to 7 are capable ofproviding the advantages similar to those provided by the levelconverter circuit of FIG. 1.

[0103] Embodiment 2

[0104]FIG. 8 is a circuit diagram of a level converter circuit ofEmbodiment 2 of the present invention.

[0105] As shown in FIG. 8, the level converter circuit of thisembodiment also uses a total of four enhancement-mode transistorsincluding two p-channel polysilicon MOS transistors and two n-channelpolysilicon MOS transistors, and has the first stage formed by PMOS M1and NMOS M3 and the second stage formed by PMOS M2 and NMOS M4.

[0106] The level converter circuit of this embodiment differs from thatof Embodiment 1, in that a source electrode of NMOS M3 of the firststage is supplied with the input signal φ6, a gate electrode of NMOS M3is connected to the low voltage VCC, a source electrode of NMOS M4 ofthe second stage is connected to the reference voltage VSS and a gateelectrode of NMOS M4 is supplied with the input signal φ6 from the inputterminal VIN.

[0107] In the level converter circuit of this embodiment, when the inputsignal φ6 from the input terminal VIN is at the H level, NMOS M3 is OFF,PMOS M1 is OFF, NMOS M4 is ON, PMOS M2 is OFF, and therefore the outputterminal VOUT outputs ground potential VSS.

[0108] Next, when the input signal φ6 is at the L level, NMOS M3 is ON,PMOS M1 is ON, NMOS M4 is OFF, PMOS M2 is ON, and therefore the outputterminal VOUT outputs the high voltage VDD.

[0109] While, in the level converter circuit of Embodiment 1, thelevel-converted output signal φ8 is in the same phase with the inputsignal φ6, the level-converted output signal φ8 of the level convertercircuit of this embodiment is in the phase opposite from the inputsignal φ6.

[0110] The level converter circuit of this embodiment also provides theadvantages similar to those provided by the level converter circuit ofEmbodiment 1, and the level converter circuit of Embodiment 2 may useone of the loads represented in FIGS. 3 to 7, as the load of the firststage which is formed by PMOS M1.

[0111] A buffer circuit similar to the level converter circuit ofEmbodiment 2 is disclosed in Japanese Patent Application Laid-open No.Hei 7-7414 (laid-open on Jan. 10, 1995). FIG. 22 is a circuit diagram ofthe buffer circuit disclosed in Japanese Patent Application Laid-openNo. Hei 7-7414.

[0112] Only the voltage VDD and the reference voltage VSS are suppliedto the buffer circuit of FIG. 22 including PMOS Q1 and NMOS Q2 so as toperform a function of the buffer circuit. NMOS Q2 is supplied with asignal having an amplitude varying between the voltage VDD and groundpotential VSS, and consequentially, a depletion-mode n-channel MOStransistor is used as NMOS Q2.

[0113] In the first place, the buffer circuit of FIG. 22 is not a levelconverter circuit for shifting a voltage level of an input signal, andit differs from the level converter circuit of Embodiment 2 in that thedepletion-mode n-channel MOS transistor, NMOS Q2, is used.

[0114] Further, Japanese Patent Application Laid-open No. Hei 7-7414does not disclose a technique for preventing the delay time of theoutput signal and the duration of the H level of the output signal fromvarying greatly with variations of the threshold voltages VTH of thetransistors NMOS M3, M4 and PMOS M1, M2 of the level converter circuitof Embodiment 2 shown in FIG. 8.

[0115] Embodiment 3

[0116]FIG. 9 is a circuit diagram of a level converter circuit ofEmbodiment 3 of the present invention.

[0117] As shown in FIG. 9, the level converter circuit of thisembodiment also uses a total of four enhancement-mode transistorsincluding two p-channel polysilicon MOS transistors and two n-channelpolysilicon MOS transistors, and has the first stage formed by PMOS M1and NMOS M3 and the second stage formed by PMOS M2 and NMOS M4.

[0118] The level converter circuit of this embodiment differs from thatof Embodiment 1, in that a gate electrode of PMOS M1 of the first stageis connected to a drain electrode (i.e., the output terminal VOUT) ofPMOS M2 of the second stage.

[0119] In the level converter circuit of this embodiment, when the inputsignal φ6 from the input terminal VIN is at the H level, NMOS M3 is ON,PMOS M1 is OFF, NMOS M4 is OFF, PMOS M2 is ON, and therefore the outputterminal VOUT outputs the high voltage VDD.

[0120] Next, when the input signal φ6 is at the L level, NMOS M3 is OFF,PMOS M1 is ON, NMOS M4 is ON, PMOS M2 is OFF, and therefore the outputterminal VOUT outputs the input signal φ6 which is the low voltage.

[0121] In this way, in the level converter circuit of this embodiment,the level-converted output signal φ8 is in the same phase with the inputsignal φ6 as in the case of Embodiment 1.

[0122] The level converter circuit of this embodiment also provides theadvantages similar to those provided by the level converter circuit ofEmbodiment 1.

[0123] In the level converter circuit of this embodiment, as shown inFIG. 9, both NMOS M3 and PMOS M1 are not ON at the same time, both NMOSM4 and PMOS M2 are not ON at the same time, and consequently anycurrents do not flow except for switching times in the first and secondstages and power consumption is reduced.

[0124] However, the level converter circuit of Embodiment 1 shown inFIG. 1 has an advantage of higher speed operation than this embodiment.

[0125] The level converter circuit of this embodiment differs from thelevel converter circuit of FIG. 14, in that the external signal φ6 fromthe external terminal VIN is applied directly to the gate electrode ofNMOS M3 and the source electrode of NMOS M4.

[0126] As described above, threshold voltages VTH of polysilicon MOStransistors vary greatly, and if the supply voltage is low, draincurrents ID vary greatly with the variations of the threshold voltagesVTH of the MOS transistors. Therefore, if the level converter circuit ofFIG. 14 is formed by polysilicon MOS transistors, there has been aproblem in that the variations of a delay time (or a phase difference)of the output signal with respect to the input signal and a duration ofthe H level (or a duration of the L level) become great mainly due tothe threshold voltages VTH of the polysilicon MOS transistors formingthe CMOS inverter INV1.

[0127] On the other hand, in the level converter circuit of thisembodiment, the gate electrode of NMOS M3 and the source electrode ofNMOS M4 have the external signal φ6 applied directly from the externalterminal VIN, and consequently, a delay time of the output signal and aduration of the H level of the output signal are prevented from varyinggreatly with the variations of the threshold voltages VTH of thetransistors, NMOS M3, M4 and PMOS M1, M2, forming the level convertercircuit.

[0128] Embodiment 4

[0129]FIG. 10 is a circuit diagram of a level converter circuit ofEmbodiment 4 of the present invention.

[0130] As shown in FIG. 10, the level converter circuit of thisembodiment also uses a total of four enhancement-mode transistorsincluding two p-channel polysilicon MOS transistors and two n-channelpolysilicon MOS transistors, and has the first stage formed by PMOS M1and NMOS M3 and the second stage formed by PMOS M2 and NMOS M4.

[0131] The level converter circuit of this embodiment differs from thatof Embodiment 2, in that a gate electrode of NMOS M1 of the first stageis connected to a drain electrode (i.e., the output terminal VOUT) ofPMOS M2 of the second stage.

[0132] In the level converter circuit of this embodiment, when the inputsignal φ6 from the input terminal VIN is at the H level, NMOS M3 is OFF,PMOS M1 is ON, NMOS M4 is ON, PMOS M2 is OFF, and therefore the outputterminal VOUT outputs ground potential VSS.

[0133] Next, when the input signal φ6 is at the L level, NMOS M3 is ON,PMOS M1 is OFF, NMOS M4 is OFF, PMOS M2 is ON, and therefore the outputterminal VOUT outputs the high voltage VDD.

[0134] In this way, in the level converter circuit of this embodiment,the level-converted output signal φ8 is in the phase opposite from theinput signal φ6, as in the case of Embodiment 2.

[0135] As in the case of the level converter circuit of Embodiment 3, inthe level converter circuit of this embodiment also, currents flow inthe circuits of the first and second stages only during switching times,and power consumption is reduced.

[0136] However, the level converter circuit of Embodiment 1 shown inFIG. 1 has an advantage of higher speed operation than this embodiment.

[0137] Embodiment 5

[0138]FIG. 11 is a block diagram representing a configuration of adisplay panel of an active-matrix type liquid crystal display module ofthe analog sampling type using polysilicon MOS transistors in accordancewith Embodiment 5 of the present invention.

[0139] In FIG. 11, reference character SUB1 denotes a transparentinsulating substrate made of glass having a softening temperature nothigher than 800° C. or quartz glass, reference numeral 3 denotes adisplay area having a plurality of pixels arranged in a matrix fashionand each pixel is provided with a polysilicon thin film transistor(TFT).

[0140] Each pixel is disposed in an area surrounded by two adjacentdrain electrode lines D and two adjacent gate electrode lines G.

[0141] Each pixel has a thin film transistor TFT, a source electrode ofwhich is connected to a pixel electrode (not shown). A liquid crystallayer is disposed between each pixel electrode and a common electrode(not shown) opposing all the pixel electrodes, and therefore a capacitorCLC formed by the liquid crystal layer is connected between the sourceelectrode of the thin film transistor TFT and the common electrode in anelectrical equivalent circuit.

[0142] An additional capacitance CADD is connected between the sourceelectrode of the thin film transistor TFT and an immediately precedinggate electrode line G.

[0143] All the gate electrodes of thin film transistors TFT in the samerow among the thin film transistors TFT arranged in a matrix fashion areconnected to one of the gate electrode lines G, and each of the gateelectrode lines G is connected to vertical scanning circuits 5 disposedon opposite sides of the display area 3.

[0144] All the drain electrodes of thin film transistors TFT in the samecolumn among the thin film transistors TFT arranged in the matrixfashion are connected to one of the drain electrode lines D, and each ofthe drain electrode lines D is connected to a horizontal scanningcircuit 4 disposed below the display area 3. Each of the drain electrodelines D is also connected to a precharge circuit 6 disposed above thedisplay area 3.

[0145] Voltage levels of control signals input via control signal inputterminals 9, 10 are level-shifted by level converter circuits 7 inaccordance with one of the above embodiments, and are supplied to thehorizontal scanning circuit 4, the vertical scanning circuit 5 and theprecharge circuit 6. In this embodiment, the polysilicon MOS transistorsforming the level converter circuits 7 are fabricated on the transparentinsulating substrate SUB1 simultaneously with the thin film transistorsTFT of the pixels.

[0146] In this embodiment, the liquid crystal display panel hasincorporated therein the level converter circuits for converting signals(generally 0 to 5 V, 0 to 3.5 V or 0 to 3 V) input from an externalcircuit into signals of amplitudes (generally high voltages) sufficientto drive the liquid crystal display panel and the circuits formed bypolysilicon MOS transistors. Therefore, the present embodiment makes itpossible to drive the liquid crystal display panel with output signalsfrom standard logic ICs.

[0147] In the liquid crystal display module using polysilicon MOStransistors, of this Embodiment also, the first gate electrode line G1,for example, is selected by the vertical scanning circuit 5 during onehorizontal scanning period, and during this period the horizontalscanning circuit 4 outputs sampling pulses to drive a sample-and-holdcircuit SH (not shown) such that analog video signals supplied fromvideo signal input terminals 8 are supplied to each of the drainelectrode lines D.

[0148] In this embodiment, the analog video signals whose frequenciesare divided by 12 are supplied from the video signal input terminals 8,and therefore with one sampling pulse, analog video signals are suppliedto twelve drain electrode lines D, respectively.

[0149] Further, within a retrace time of one horizontal scanning period,the precharge circuit 6 supplies a precharge voltage input from aprecharge voltage input terminal 11 to each of the drain electrode linesD.

[0150] In this embodiment, one of the level converter circuits of theembodiments of the present invention is used as the level convertercircuit 7, and therefore this circuit reduces variations of phases ofthe sampling pulses and durations of the H level supplied from thehorizontal scanning circuit 4, even if variations occur in the thresholdvoltages VTH of the polysilicon MOS transistors forming the levelconverter circuit.

[0151] Consequently, this embodiment prevent occurrence of a ghost in animage displayed on the liquid crystal display panel, and improves thequality of the displayed image compared with that obtained by the priorart.

[0152] The present invention is not limited to the liquid crystaldisplay module of the analog-sampling active-matrix type usingpolysilicon MOS transistors, but is also applicable to a liquid crystaldisplay module of the digital-signal-input active-matrix type usingpolysilicon MOS transistors shown in FIG. 12.

[0153] The liquid crystal display module of the digital-signal-inputactive-matrix type using polysilicon MOS transistors shown in FIG. 12 isthe same as the liquid crystal display module of the analog-samplingactive-matrix type using polysilicon MOS transistors shown in FIG. 11,except that the liquid crystal display module of thedigital-signal-input active-matrix type is provided with a D/A converterDAC connected to the video signal input terminals 8.

[0154] The D/A converter DAC of the liquid crystal display module ofFIG. 12 is also comprised of polysilicon thin film transistorsfabricated simultaneously with the thin film transistors TFT formingpixels, and therefore digital video signals can be input directly intothe liquid crystal display panel.

[0155] Further, level converter circuits 7 in accordance with one of theabove-described embodiments are provided between the D/A converter DACand the video signal input terminals 8, and therefore output signalsfrom standard logic ICs can be input directly to the video signal inputterminals 8.

[0156] In the level converter circuit 7 formed by polysilicon thin filmtransistors in accordance with one of the above-described embodiments,delay times vary little with the variations of threshold voltages VTH ofthe polysilicon MOS transistors, and a portion of data is not invertedin the D/A converter DAC and therefore defective displays do not occur.

[0157] The inventions made by the present inventors have been explainedconcretely based upon the above embodiments, but the present inventionsare not limited to the above embodiments and it will be obvious to thoseskilled in the art that various changes and modifications may be madetherein without departing from the spirit and scope of the presentinventions. For example, the active-matrix display panel shown in FIG.11 can be used for an electroluminescent (EL) display device.

[0158] The following explains briefly advantages obtained byrepresentative ones of the inventions disclosed in this specification.

[0159] (1) The level converter circuits of the present invention canreduce the total number of transistors required for the level convertercircuit.

[0160] (2) The level converter circuits of the present invention canreduce influences due to variations of threshold voltages of transistorsforming the level converter circuit.

[0161] (3) The liquid crystal display device of the present inventioncan improve the quality of images displayed on its display panel.

What is claimed is:
 1. A level converter circuit comprising: an inputterminal adapted to be supplied with a signal swinging from a firstvoltage to a second voltage lower than said first voltage; a firsttransistor having a gate electrode connected to said input terminal, anda source electrode connected to ground potential; a second transistorhaving a gate electrode connected to a drain electrode of said firsttransistor, a source electrode connected to a supply voltage, and adrain electrode connected to an output terminal; a load circuitconnected between said gate electrode of said second transistor and saidsupply voltage; a third transistor having a source electrode connectedto said input terminal, a drain electrode connected to said outputterminal, and a gate electrode supplied with a DC voltage higher thansaid second voltage and lower than said first voltage, wherein saidlevel converter circuit outputs a third voltage higher than said secondvoltage when said input terminal is supplied with said first voltage,and said level converter circuit outputs said second voltage when saidinput terminal is supplied with said second voltage.
 2. A levelconverter circuit according to claim 1 , wherein said first transistorand said third transistor are n-channel type transistors and said secondtransistor is a p-channel type transistor.
 3. A level converter circuitaccording to claim 1 , wherein said load circuit is a transistor havinga channel of a same conductivity type as that of said second transistor.4. A level converter circuit according to claim 1 , wherein said thirdvoltage is higher than said first voltage.
 5. A level converter circuitcomprising: an input terminal adapted to be supplied with a digitalsignal swinging from a first voltage to a second voltage lower than saidfirst voltage; a first transistor having a gate electrode connected tosaid input terminal, and a source electrode connected to groundpotential; a second transistor having a gate electrode connected to adrain electrode of said first transistor, a source electrode connectedto a supply voltage, and a drain electrode connected to an outputterminal; a load circuit connected between said gate electrode of saidsecond transistor and said supply voltage; a third transistor having asource electrode connected to said input terminal, a drain electrodeconnected to said output terminal, and a gate electrode supplied with aDC voltage higher than said second voltage and lower than said firstvoltage, wherein (a) when said input terminal is supplied with saidfirst voltage, said first transistor and said second transistor are ON,and said level converter circuit outputs a third voltage higher thansaid first voltage; and (b) when said input terminal is supplied withsaid second voltage, said first transistor and said second transistorare OFF and said level converter circuit outputs said second voltage viasaid third transistor.
 6. A level converter circuit according to claim 5, wherein said first transistor and said third transistor are n-channeltype transistors and said second transistor is a p-channel typetransistor.
 7. A level converter circuit according to claim 5 , whereinsaid load circuit is a transistor having a channel of a sameconductivity type as that of said second transistor.
 8. A liquid crystaldisplay device including a pair of substrates, a liquid crystal layersandwiched between said pair of substrates, a plurality of pixels formedbetween said pair of substrates and a driver circuit for driving saidplurality of pixels, said driver circuit being provided with a levelconverter circuit, said level converter circuit comprising: an inputterminal adapted to be supplied with a digital signal swinging from afirst voltage to a second voltage lower than said first voltage; a firsttransistor of an n-channel type having a gate electrode connected tosaid input terminal, and a source electrode connected to groundpotential; a second transistor of a p-channel type having a gateelectrode connected to a drain electrode of said first transistor, asource electrode connected to a supply voltage, and a drain electrodeconnected to an output terminal; a load circuit connected between saidgate electrode of said second transistor and said supply voltage; athird transistor having a source electrode connected to said inputterminal, a drain electrode connected to said output terminal, and agate electrode supplied with a DC voltage, said DC voltage being suchthat, (a) when said source electrode of said third transistor issupplied with said second voltage, said third transistor is ON, and (b)when said source electrode of said third transistor is supplied withsaid first voltage, said third transistor is OFF, wherein (i) said firsttransistor and said second transistor are ON and said level convertercircuit outputs a third voltage higher than said first voltage, whensaid input terminal is supplied with said first voltage; and (ii) saidfirst transistor and said second transistor are OFF and said levelconverter circuit outputs said second voltage via said third transistor,when said input terminal is supplied with said second voltage.
 9. Aliquid crystal display device according to claim 8 , wherein asemiconductor layer of said first transistor is made of polysilicon. 10.A liquid crystal display device according to claim 8 , wherein each ofsaid plurality of pixels are provided with a thin film transistor havinga channel of a same conductivity type as that of said second transistor.